18143296. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18143296 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes a method of manufacturing an integrated circuit device. Here is a simplified explanation of the patent application:
- The method starts by forming a feature structure on a substrate.
- A first hardmask is then formed to cover the feature structure.
- On top of the first hardmask, a second hardmask is formed. This second hardmask consists of multiple line portions that extend in one direction and are spaced apart in a perpendicular direction.
- An etch mask pattern is formed on either the first hardmask or the second hardmask. This etch mask pattern consists of multiple line portions.
- From the first hardmask, a first hardmask pattern is formed, which consists of multiple line portions.
- From the second hardmask, multiple second hardmask patterns are formed.
- Finally, a feature pattern is formed by etching the feature structure using the second hardmask patterns and the first hardmask pattern.
Potential applications of this technology:
- Manufacturing integrated circuit devices, such as microchips and processors.
- Fabrication of complex electronic circuits with precise patterns.
Problems solved by this technology:
- Enables the creation of intricate patterns on integrated circuit devices.
- Provides a method for accurately transferring patterns from masks to the feature structure.
Benefits of this technology:
- Improved precision in manufacturing integrated circuit devices.
- Enables the production of smaller and more efficient electronic components.
- Increases the overall performance and functionality of electronic devices.
Original Abstract Submitted
In some embodiments, a method of manufacturing an integrated circuit device includes forming a feature structure on a substrate, forming a first hardmask configured to cover the feature structure, forming, on the first hardmask, a second hardmask comprising a plurality of first line portions extending lengthwise in a first horizontal direction and being apart from each other in a second horizontal direction perpendicular to the first horizontal direction, forming, on at least one of the first hardmask and the second hardmask, an etch mask pattern comprising a plurality of second line portions, forming, from the first hardmask, a first hardmask pattern comprising a plurality of third line portions, forming, from the second hardmask, a plurality of second hardmask patterns, and forming a feature pattern comprising a plurality of fourth line portions by etching the feature structure and using the plurality of second hardmask patterns and the first hardmask pattern.
