18143127. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyuchang Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18143127 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a memory cell array with multiple memory cells connected to word lines and bit lines, a word line driving circuit with sub-word line decoders connected to the word lines, and control logic to select word lines and control the word line driving circuit to float unselected word lines adjacent to the selected word line during certain periods.
- Memory cell array with multiple memory cells
- Word line driving circuit with sub-word line decoders
- Control logic to select word lines and float unselected word lines
- Improved control of word lines in a semiconductor device
Potential Applications
- Memory devices
- Integrated circuits
- Computer systems
Problems Solved
- Efficient control of word lines in memory cell arrays
- Reduction of power consumption in semiconductor devices
- Enhanced performance of memory devices
Benefits
- Improved memory cell array operation
- Enhanced reliability of semiconductor devices
- Increased efficiency in data storage and retrieval
Original Abstract Submitted
A semiconductor device includes a memory cell array that includes a plurality of memory cells electrically connected to a plurality of word lines and a plurality of bit lines, a word line driving circuit that includes a plurality of sub-word line decoders electrically connected to the plurality of word lines, and a control logic configured to determine a selected word line and unselected word lines among the plurality of word lines, and configured to control the word line driving circuit such that at least one of the unselected word lines that is adjacent to the selected word line is floated during at least a portion of a period in which a voltage of the selected word line returns to an initial level.
