18142872. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yejin Park of Suwon-si (KR)

Seungyoon Kim of Suwon-si (KR)

Jongseon Ahn of Suwon-si (KR)

Heesuk Kim of Suwon-si (KR)

Jaehwang Sim of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18142872 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a substrate, a conductive layer, and a contact plug connected to the conductive layer. The contact plug is composed of a first portion and a second portion, with the upper surface of the first portion being wider than the lower surface of the second portion. The contact plug also includes a barrier layer, a first conductive layer on the barrier layer, and a second conductive layer on the first conductive layer. The second conductive layer contains voids. The barrier layer, first conductive layer, and second conductive layer extend continuously in both portions, with the barrier layer having a first thickness, the second conductive layer having a second thickness equal to or greater than the first thickness, and the first conductive layer having a third thickness equal to or greater than the second thickness.

  • The semiconductor device includes a contact plug with a unique structure, consisting of a wider upper surface and a narrower lower surface.
  • The contact plug is composed of a barrier layer, a first conductive layer, and a second conductive layer with voids.
  • The barrier layer, first conductive layer, and second conductive layer extend continuously in both portions of the contact plug.
  • The second conductive layer has a thickness equal to or greater than the first thickness of the barrier layer, and the first conductive layer has a thickness equal to or greater than the second thickness of the second conductive layer.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
  • It can be applied in integrated circuits, memory devices, and microprocessors.

Problems Solved:

  • The unique structure of the contact plug helps improve the electrical conductivity and reliability of the semiconductor device.
  • The voids in the second conductive layer reduce the overall weight and size of the device while maintaining its performance.

Benefits:

  • Enhanced electrical conductivity and reliability of the semiconductor device.
  • Reduced weight and size of the device without compromising performance.
  • Improved integration and functionality in electronic devices.


Original Abstract Submitted

A semiconductor device includes a substrate; a conductive layer; and a contact plug connected to the conductive layer. The contact plug includes a first portion; and a second portion, sequentially stacked, wherein a width of an upper surface of the first portion is wider than a width of a lower surface of the second portion. The contact plug includes a barrier layer; a first conductive layer on the barrier layer; and a second conductive layer on the first conductive layer. The second conductive layer comprises voids. The barrier layer, the first conductive layer, and the second conductive layer extend continuously in the first and second portions. The barrier layer has a first thickness, the second conductive layer has a second thickness, equal to or greater than the first thickness, and the first conductive layer has a third thickness, equal to or greater than the second thickness.