18142795. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Seungyoon Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18142795 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a first structure, a second structure, and gate contact plugs that penetrate through both structures. The first structure consists of a first stack structure with alternating layers of gate and insulating materials, a first pad capping pattern that penetrates through part of the first stack structure, and a first buffer capping pattern that penetrates through another part of the first stack structure and is spaced apart from the first pad capping pattern. The second structure includes a similar stack structure with gate and insulating layers, as well as a second pad capping pattern that penetrates through part of the second stack structure.
- The semiconductor device includes a first structure with alternating gate and insulating layers, a first pad capping pattern, and a first buffer capping pattern.
- A second structure with similar gate and insulating layers and a second pad capping pattern is also included.
- Gate contact plugs penetrate through both structures to facilitate electrical connections.
Potential Applications
- This technology can be used in the manufacturing of advanced semiconductor devices such as transistors and integrated circuits.
- It can improve the performance and efficiency of electronic devices by enhancing the conductivity and reliability of gate contacts.
Problems Solved
- Provides a more reliable and efficient method for creating gate contact plugs in semiconductor devices.
- Enhances the overall performance and functionality of electronic devices by improving electrical connections.
Benefits
- Improved conductivity and reliability of gate contacts.
- Enhanced performance and efficiency of semiconductor devices.
- Potential for increased functionality and capabilities in electronic devices.
Original Abstract Submitted
A semiconductor device may include a first structure, a second structure on the first structure, and gate contact plugs penetrating through the first and second structures. The first structure may include a first stack structure including first gate layers and first insulating layers alternately stacked, a first pad capping pattern penetrating through at least a first portion of the first stack structure, and a first buffer capping pattern penetrating through at least a second portion of the first stack structure and spaced apart from the first pad capping pattern. The second structure may include a second stack structure including second gate layers and second insulating layers alternately stacked, and a second pad capping pattern penetrating through at least a portion of the second stack structure. The first gate layers may include first gate pads covered by the first pad capping pattern.
