18139546. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jongmyung Yoo of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18139546 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a substrate, a lower electrode, a supporter, a dielectric layer, an upper electrode, and a liner film. The lower electrode is positioned on the substrate and extends vertically. The supporter surrounds at least a portion of the sidewalls of the lower electrode and supports it. The dielectric layer is on top of the lower electrode and the supporter. The upper electrode is on top of the dielectric layer and at least a portion of the lower electrode. The liner film is positioned between the lower electrode and the supporter, surrounding the upper portion of the lower electrode. The lower electrode contains a first metal nitride with a higher ratio of the first metal compared to the second metal nitride in the liner film. Additionally, the first metal nitride has a lower ratio of nitrogen atoms compared to the second metal nitride.

  • The semiconductor device includes a substrate, lower electrode, supporter, dielectric layer, upper electrode, and liner film.
  • The lower electrode is positioned on the substrate and extends vertically.
  • The supporter surrounds and supports at least a portion of the lower electrode's sidewalls.
  • The dielectric layer is on top of the lower electrode and the supporter.
  • The upper electrode is on top of the dielectric layer and at least a portion of the lower electrode.
  • The liner film is positioned between the lower electrode and the supporter, surrounding the upper portion of the lower electrode.
  • The lower electrode contains a first metal nitride with a higher ratio of the first metal compared to the second metal nitride in the liner film.
  • The first metal nitride has a lower ratio of nitrogen atoms compared to the second metal nitride.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as integrated circuits, transistors, and memory devices.
  • It can be applied in the field of telecommunications, consumer electronics, automotive electronics, and more.

Problems Solved:

  • The supporter surrounding the lower electrode helps to improve the structural stability of the device.
  • The specific composition of the lower electrode and liner film enhances the performance and reliability of the semiconductor device.
  • The dielectric layer provides insulation between the upper and lower electrodes, preventing electrical interference.

Benefits:

  • The semiconductor device offers improved structural stability, which can lead to increased durability and longevity.
  • The specific composition of the lower electrode and liner film enhances the device's performance, such as its conductivity and resistance properties.
  • The dielectric layer ensures proper insulation, reducing the risk of electrical interference and improving overall device functionality.


Original Abstract Submitted

A semiconductor device includes a substrate, a lower electrode on the substrate and extending in a vertical direction, a supporter surrounding at least a portion of sidewalls of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the supporter, an upper electrode on the lower electrode and at least a portion of the dielectric layer, wherein the dielectric layer is between the upper electrode and the lower electrode, and a liner film between the lower electrode and the supporter, the liner film surrounding an upper portion of the lower electrode, where the lower electrode includes a first metal nitride including a first metal, the liner film includes a second metal nitride including a second metal, a first ratio of the first metal in the first metal nitride is higher than a second ratio of the second metal in the second metal nitride, and a third ratio of nitrogen atoms in the first metal nitride is lower than a fourth ratio of nitrogen atoms in the second metal nitride.

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