18139060. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Infineon Technologies AG)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Rudolf Elpelt of Erlangen (DE)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18139060 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a transistor with gate trenches formed in a semiconductor substrate, gate electrode, source region, channel region, and drift region. The channel region has a doped portion of a second conductivity type with a doping concentration that decreases in a specific direction.
- Gate trenches formed in semiconductor substrate
- Gate electrode in at least one gate trench
- Source region, channel region, and drift region arranged in ridges
- Doped portion of channel region with decreasing doping concentration
Potential Applications
The technology described in the patent application could be applied in the development of high-performance semiconductor devices for various electronic applications, such as power electronics, integrated circuits, and communication systems.
Problems Solved
This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the design and configuration of the transistor components, such as the gate trenches, gate electrode, and channel region.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and improved reliability of semiconductor devices. The optimized design of the transistor components can lead to better overall functionality and reduced power consumption.
Potential Commercial Applications
The technology has potential commercial applications in industries that require advanced semiconductor devices, such as telecommunications, automotive, aerospace, and consumer electronics. The optimized design and improved performance of the devices can attract manufacturers looking for cutting-edge technology solutions.
Possible Prior Art
One possible prior art could be the development of similar semiconductor devices with gate trenches and optimized transistor configurations for improved performance and efficiency. Research and patents in the field of semiconductor technology may have explored similar concepts and designs.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor devices to evaluate the performance and efficiency improvements offered by the described technology.
What are the specific manufacturing processes involved in producing the semiconductor device with the described transistor configuration?
The article does not delve into the detailed manufacturing processes required to produce the semiconductor device with the specific transistor configuration outlined in the patent application.
Original Abstract Submitted
A semiconductor device includes a transistor. The transistor includes gate trenches formed in a semiconductor substrate, extending in a first horizontal direction and patterning the semiconductor substrate into ridges. The ridges are arranged between two adjacent gate trenches, respectively. The transistor further includes a gate electrode arranged in at least one of the gate trenches, a source region of a first conductivity type, a channel region, and a drift region of the first conductivity type. The source region, channel region and a part of the drift region are arranged in the ridges. The gate electrode is insulated from the channel region and the drift region. The channel region includes a doped portion of a second conductivity type. A doping concentration of the doped portion decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridge.
