18137036. MEMORY CONTROLLER, A STORAGE DEVICE, AND AN OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
MEMORY CONTROLLER, A STORAGE DEVICE, AND AN OPERATING METHOD OF THE STORAGE DEVICE
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MEMORY CONTROLLER, A STORAGE DEVICE, AND AN OPERATING METHOD OF THE STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18137036 titled 'MEMORY CONTROLLER, A STORAGE DEVICE, AND AN OPERATING METHOD OF THE STORAGE DEVICE
Simplified Explanation
The abstract describes an operating method for a storage device that includes a memory controller and a non-volatile memory. The method involves performing a first read using a default read voltage set, and if the first read fails, performing a second read by calculating a degradation compensation level and using a history read voltage set.
- Weight table includes weights preset according to word line groups and state read voltages.
- Offset table includes offset levels preset according to word line groups and state read voltages.
- Displacement level corresponds to the difference between default read voltage level and optimal read voltage level.
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- Potential Applications
- This technology can be applied in solid-state drives (SSDs) to improve read performance and reliability.
- It can be used in data centers to enhance data retrieval speed and efficiency.
- Problems Solved
- Addresses issues related to data degradation in non-volatile memories.
- Improves the accuracy and success rate of data reads from the memory.
- Benefits
- Enhanced data read performance.
- Increased reliability of data retrieval.
- Improved overall efficiency of storage devices.
Original Abstract Submitted
An operating method of a storage device including a memory controller and a non-volatile memory, the method including: performing a first read in response to a read request by reading data from the non-volatile memory using a default read voltage set; and performing a second read when the first read fails, by calculating a degradation compensation level, using a weight table, offset table, and displacement level, calculating a history read voltage set by performing an operation on the default read voltage set and degradation compensation level, and reading the data using the history read voltage set, wherein the weight table includes weights preset according to word line groups and state read voltages, the offset table includes offset levels preset according to the word line groups and the state read voltages, and the displacement level corresponds to a difference between a default read voltage level and an optimal read voltage level.
