18134296. PLASMA-RESISTANT MEMBER HAVING STACKED STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
PLASMA-RESISTANT MEMBER HAVING STACKED STRUCTURE AND METHOD FOR FABRICATING THE SAME
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PLASMA-RESISTANT MEMBER HAVING STACKED STRUCTURE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18134296 titled 'PLASMA-RESISTANT MEMBER HAVING STACKED STRUCTURE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The abstract describes a plasma-resistant member that consists of three layers: a lower layer made of yttrium oxide, a buffer layer, and an upper layer made of yttrium oxyfluoride or fluorine-rich yttrium oxide. The buffer layer has a thermal expansion coefficient that falls between the thermal expansion coefficients of the upper and lower layers.
- The lower layer is made of yttrium oxide.
- The buffer layer is placed on top of the lower layer.
- The upper layer is placed on top of the buffer layer and is made of yttrium oxyfluoride or fluorine-rich yttrium oxide.
- The buffer layer has a thermal expansion coefficient that is between the thermal expansion coefficients of the upper and lower layers.
Potential applications of this technology:
- Plasma-resistant coatings for various industrial applications.
- Protective layers for electronic devices exposed to plasma environments.
- Coatings for aerospace components to withstand high-temperature plasma.
Problems solved by this technology:
- Protects the underlying substrate from plasma-induced damage.
- Reduces the thermal stress caused by the mismatch in thermal expansion coefficients between different layers.
Benefits of this technology:
- Enhanced plasma resistance and durability.
- Improved thermal stability and reliability.
- Extended lifespan of coated components.
- Increased performance and efficiency in plasma-based applications.
Original Abstract Submitted
A plasma-resistant member includes a lower layer disposed on a substrate and including yttrium oxide, a buffer layer disposed on the lower layer, and an upper layer disposed on the buffer layer and including yttrium oxyfluoride or fluorine-rich yttrium oxide, wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer.
