18133945. PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-Hao Lee of Taipei City (TW)
Huan-Ling Lee of Hsinchu City (TW)
Hsin-Chang Lee of Zhubei City (TW)
Chin-Hsiang Lin of Hsinchu (TW)
PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133945 titled 'PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The abstract describes a pellicle for an extreme ultraviolet (EUV) photomask that includes a pellicle frame and a main membrane with nanotubes covered by a coating layer containing Si and one or more metal elements.
- The pellicle for an EUV photomask includes a pellicle frame and a main membrane.
- The main membrane consists of nanotubes covered by a coating layer containing Si and metal elements.
Potential Applications
The technology could be used in the manufacturing of extreme ultraviolet (EUV) photomasks for semiconductor industry.
Problems Solved
1. Protection of EUV photomasks from contaminants and damage. 2. Enhancing the durability and performance of EUV photomasks.
Benefits
1. Improved quality and longevity of EUV photomasks. 2. Enhanced precision and accuracy in semiconductor manufacturing processes.
Potential Commercial Applications
Optimizing EUV photomask production for semiconductor manufacturers.
Possible Prior Art
There may be prior art related to the use of nanotubes in photomask technology, but specific examples are not provided in the abstract.
Unanswered Questions
How cost-effective is the production of this pellicle compared to existing technologies?
The abstract does not provide information on the cost implications of implementing this technology.
What specific metal elements are used in the coating layer, and how do they contribute to the performance of the pellicle?
The abstract mentions the presence of metal elements in the coating layer but does not specify which ones are used or how they impact the functionality of the pellicle.
Original Abstract Submitted
A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.
