18133933. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chun-Chih Ho of Taichung City (TW)

Ching-Yu Chang of Yuansun Village (TW)

Chin-Hsiang Lin of Hsinchu (TW)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18133933 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Simplified Explanation

The method described in the patent application involves manufacturing a semiconductor device by forming a first layer with an organic material over a substrate, followed by the formation of a second layer containing a silicon-containing polymer with pendant acid groups or pendant photoacid generator groups. The second layer is formed by reacting a material containing an acid group or photoacid generator group with a silicon-based polymer, resulting in an upper second layer with the desired properties.

• Formation of first layer with organic material over substrate
• Formation of second layer with silicon-containing polymer and acid/photoacid groups
• Reaction between material containing acid/photoacid groups and silicon-based polymer
• Patterning of photosensitive layer over the second layer

Potential Applications

The technology described in the patent application could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory devices.

Problems Solved

This technology addresses the need for improved methods of manufacturing semiconductor devices with precise patterning and control over the properties of the layers involved.

Benefits

The benefits of this technology include enhanced performance and reliability of semiconductor devices, as well as increased efficiency in the manufacturing process.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry, where precise patterning and control over material properties are essential for the production of high-quality devices.

Possible Prior Art

One possible prior art in this field could be the use of similar methods involving the formation of layers with specific properties for semiconductor device manufacturing.

How does this technology compare to existing methods in terms of cost-effectiveness?

The article does not provide information on the cost-effectiveness of this technology compared to existing methods. Further research and analysis would be needed to determine the economic viability of implementing this innovation.

What are the potential environmental impacts of using this technology?

The environmental impacts of using this technology are not addressed in the article. It would be important to consider factors such as waste generation, energy consumption, and chemical usage to assess the sustainability of this innovation.

Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.