18133118. METHOD FOR FORMING RESIST PATTERN BY USING EXTREME ULTRAVIOLET LIGHT AND METHOD FOR FORMING PATTERN BY USING THE RESIST PATTERN AS MASK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD FOR FORMING RESIST PATTERN BY USING EXTREME ULTRAVIOLET LIGHT AND METHOD FOR FORMING PATTERN BY USING THE RESIST PATTERN AS MASK
Organization Name
Inventor(s)
Jonghyun Jung of Suwon-si (KR)
METHOD FOR FORMING RESIST PATTERN BY USING EXTREME ULTRAVIOLET LIGHT AND METHOD FOR FORMING PATTERN BY USING THE RESIST PATTERN AS MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133118 titled 'METHOD FOR FORMING RESIST PATTERN BY USING EXTREME ULTRAVIOLET LIGHT AND METHOD FOR FORMING PATTERN BY USING THE RESIST PATTERN AS MASK
Simplified Explanation
The abstract of the patent application describes a method for forming a resist pattern using an inorganic photoresist. The method involves the following steps:
1. Formation of a photosensitive layer on a substrate using an inorganic photoresist. 2. Irradiation of the photosensitive layer with a deep ultraviolet (DUV) light. 3. Irradiation of the photosensitive layer with an extreme ultraviolet (EUV) light after the DUV light exposure. 4. Heating of the photosensitive layer exposed to the EUV light. 5. Development of the heated photosensitive layer.
Potential applications of this technology:
- Semiconductor manufacturing: The method can be used in the fabrication of semiconductor devices, where resist patterns are crucial for defining circuit patterns on the substrate.
- Nanotechnology: The method can be applied in the production of nanoscale structures and devices, where precise resist patterns are needed.
- Optoelectronics: The technology can be utilized in the manufacturing of optoelectronic devices, such as displays and photovoltaic cells, which require accurate resist patterns.
Problems solved by this technology:
- Enhanced resolution: The use of both DUV and EUV light irradiation improves the resolution of the resist pattern, allowing for the fabrication of smaller features.
- Improved sensitivity: The inorganic photoresist used in the method exhibits high sensitivity to both DUV and EUV light, enabling efficient exposure and development processes.
- Thermal stability: The heating step enhances the stability of the resist pattern, making it more resistant to subsequent processing steps.
Benefits of this technology:
- Higher precision: The method enables the formation of resist patterns with increased accuracy and finer details, leading to improved device performance.
- Increased productivity: The combination of DUV and EUV light irradiation, along with efficient development, allows for faster and more efficient resist pattern formation.
- Compatibility with advanced processes: The use of inorganic photoresist and EUV light makes the method suitable for advanced semiconductor manufacturing processes, including next-generation lithography techniques.
Original Abstract Submitted
A method for forming a resist pattern is disclosed. According to the method, a photosensitive layer is formed on a substrate by using an inorganic photoresist. The photosensitive layer is irradiated with a deep ultraviolet (DUV) light. The photosensitive layer is irradiated with an extreme ultraviolet (EUV) light after the irradiation of the DUV light. The photosensitive layer exposed to the EUV light is heated. The heated photosensitive layer is developed.
