18125776. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18125776 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes an active pattern, a capacitor contact structure connected to the active pattern, and a capacitor structure connected to the capacitor contact structure. The capacitor structure consists of a first lower electrode, a second lower electrode, a supporter, a capacitor insulating layer, and an upper electrode.
- The capacitor structure has a unique design with the first and second lower electrodes positioned adjacent to each other.
- A supporter is used to support the first and second lower electrodes, with a curved sidewall connected to both electrodes.
- The upper electrode includes an intervening electrode portion enclosed by the supporter, creating a specific configuration for the capacitor structure.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, particularly in the development of capacitors with improved performance and efficiency.
Problems Solved
This innovation addresses the need for more compact and reliable capacitor structures in semiconductor devices, enhancing their overall functionality and operational capabilities.
Benefits
- Enhanced performance of semiconductor devices - Improved efficiency in capacitor design - Compact and reliable structure for capacitors
Original Abstract Submitted
A semiconductor device may include an active pattern, a capacitor contact structure electrically connected to the active pattern, and a capacitor structure electrically connected to the capacitor contact structure. The capacitor structure may include a first lower electrode and a second lower electrode that are adjacent to each other, a supporter supporting the first and second lower electrodes, a capacitor insulating layer covering the first and second lower electrodes, and an upper electrode on the capacitor insulating layer. The supporter may include a first supporter curved sidewall connected to the first lower electrode and the second lower electrode, and the upper electrode may include an intervening electrode portion enclosed by the supporter. The first supporter curved sidewall may be convex toward the intervening electrode portion.
