18125464. PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wei-Hao Lee of Taipei City (TW)

Pei-Cheng Hsu of Taipei (TW)

Chia-Tung Kuo of Hsinchu City (TW)

Hsin-Chang Lee of Zhubei City (TW)

PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18125464 titled 'PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The abstract of the patent application describes a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask. The method involves forming a membrane of Spcarbon, performing a treatment on the membrane to change its surface property, and then forming a cover layer over the membrane.

  • The patent application describes a method for manufacturing a pellicle for EUV photomasks.
  • The method involves using Spcarbon to form a membrane.
  • The membrane undergoes a treatment to alter its surface property.
  • After the treatment, a cover layer is formed over the membrane.

Potential Applications:

  • Manufacturing of extreme ultraviolet (EUV) photomasks.
  • Semiconductor industry for lithography processes.

Problems Solved:

  • Provides a method to manufacture pellicles for EUV photomasks.
  • Addresses the need for a membrane with specific surface properties.

Benefits:

  • Enables the production of high-quality EUV photomasks.
  • Enhances the performance and durability of the pellicles.
  • Improves the efficiency and accuracy of lithography processes in the semiconductor industry.


Original Abstract Submitted

In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a membrane of Spcarbon is formed, a treatment is performed on the membrane to change a surface property of the membrane, and after the treatment, a cover layer is formed over the membrane.