18123095. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chieh-Hsin Hsieh of Hsinchu County (TW)
Wei-Han Lai of New Taipei City (TW)
Ching-Yu Chang of Yuansun Village (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18123095 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device using organic and silicon-containing materials in multiple layers.
- The first layer is made of an organic material over a substrate.
- The second layer contains a silicon-containing material along with additives like a photoacid generator, an actinic radiation absorbing additive with an iodine substituent, or a silicon-containing monomer with iodine or phenol group substituents.
- A photosensitive layer is then formed over the second layer and patterned for further processing.
Potential Applications
This technology could be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and microprocessors.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by utilizing a combination of organic and silicon-containing materials in the manufacturing process.
Benefits
The use of organic and silicon-containing materials in different layers can enhance the functionality and reliability of semiconductor devices. It also allows for more precise patterning and control during the manufacturing process.
Potential Commercial Applications
The technology could find applications in the electronics industry for producing advanced semiconductor devices with improved performance and functionality.
Possible Prior Art
Prior art may include similar methods of manufacturing semiconductor devices using organic and silicon-containing materials, but the specific combination of additives and materials described in this patent application may be novel.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes.
What are the potential limitations or challenges of implementing this technology on an industrial scale?
The article does not address the potential limitations or challenges of implementing this technology on an industrial scale.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a first layer comprising an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing material and one or more selected from the group consisting of a photoacid generator, an actinic radiation absorbing additive including an iodine substituent, and a silicon-containing monomer having iodine or phenol group substituents. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
