18120845. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120845 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes a first gate structure, a first source/drain layer, and a first contact plug. The device is formed on a substrate and has specific structural features.
- The first gate structure is formed on the substrate and extends parallel to the substrate's upper surface.
- The first source/drain layer is located at the side of the first gate structure and runs parallel to the substrate's upper surface in a direction that crosses the gate structure.
- The upper surface of the first source/drain layer has a central portion and an edge portion in the direction mentioned earlier.
- The central portion of the first source/drain layer's upper surface is lower than the edge portion.
- The first contact plug is formed on the first source/drain layer and makes contact with the edge portion of its upper surface.
Potential applications of this technology:
- Semiconductor devices: This innovation can be applied to various semiconductor devices, such as transistors, integrated circuits, and microprocessors.
- Electronics manufacturing: The technology can be utilized in the manufacturing process of electronic devices to improve their performance and functionality.
Problems solved by this technology:
- Improved device performance: The specific structural features described in the patent application can enhance the performance of semiconductor devices by optimizing the contact between different layers and improving electrical conductivity.
- Reduction of parasitic resistance: The lower central portion of the first source/drain layer's upper surface helps minimize parasitic resistance, leading to better device performance.
Benefits of this technology:
- Enhanced device functionality: By improving the contact between different layers, the technology can enhance the overall functionality and performance of semiconductor devices.
- Increased efficiency: The reduction of parasitic resistance contributes to increased efficiency and improved power consumption in electronic devices.
- Manufacturing optimization: The specific structural features described in the patent application can be implemented in the manufacturing process to optimize the production of semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a first gate structure, a first source/drain layer and a first contact plug. The first gate structure is formed on a substrate, and extends in a second direction parallel to an upper surface of the substrate. The first source/drain layer is formed at a side of the first gate structure in a first direction substantially parallel to the upper surface of the substrate and crossing the second direction. A central portion in the first direction of an upper surface of the first source/drain layer is lower than an edge portion in the first direction of the upper surface of the first source/drain layer. The first contact plug is formed on the first source/drain layer, and contacts the edge portion of the upper surface of the first source/drain layer.
