18120704. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Inventor(s)
Takuya Yasutake of Kanazawa Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120704 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a drain electrode, a source electrode, a semiconductor region, a gate electrode, a first insulation film, and a second insulation film with a higher dielectric constant.
- The semiconductor device has a drain electrode, source electrode, and semiconductor region for electrical conduction.
- A gate electrode is present in the semiconductor region, separated by a first insulation film.
- A second insulation film with a higher dielectric constant is located between the gate electrode and the source electrode.
Potential Applications
The semiconductor device can be used in various electronic applications such as integrated circuits, power electronics, and sensors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by utilizing materials with specific dielectric constants.
Benefits
The use of a second insulation film with a higher dielectric constant can enhance the overall performance and reliability of the semiconductor device.
Potential Commercial Applications
The semiconductor device can be applied in industries such as telecommunications, automotive, and consumer electronics for advanced electronic systems.
Possible Prior Art
Prior art may include similar semiconductor devices with different insulation materials or configurations to achieve specific electrical properties.
Unanswered Questions
How does the specific dielectric constant of the second insulation film impact the overall performance of the semiconductor device?
The specific dielectric constant of the second insulation film affects the capacitance and switching speed of the device, but the exact relationship and optimization techniques are not detailed in the abstract.
What are the potential challenges in manufacturing semiconductor devices with high dielectric constant materials?
The abstract does not address the potential challenges in manufacturing processes, such as deposition techniques, material compatibility, or cost implications, which could be important considerations for commercial production.
Original Abstract Submitted
A semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.
