18120367. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jee Woong Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120367 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with first and second surfaces. On the first surface, there are first to third conductive line structures that extend in a first direction and are spaced apart from each other in a second direction. Additionally, there is a SRAM unit cell on the first surface, which includes first and second inverters connected to each other, a first pass transistor connected to the first inverter, a second pass transistor connected to the second inverter, a first gate electrode included in the first inverter, and a second gate electrode included in the first pass transistor. The first inverter and the first pass transistor are positioned between the first and third conductive line structures, while the second inverter and the second pass transistor are positioned between the second and third conductive line structures. The first and second gate electrodes are positioned between the first and third conductive line structures.
- The patent application describes a semiconductor device with a specific arrangement of conductive line structures and SRAM unit cells.
- The conductive line structures are positioned in a way that allows for the placement of the inverters and pass transistors of the SRAM unit cells.
- The gate electrodes of the inverters and pass transistors are also positioned between the conductive line structures.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices that require memory storage, such as computers, smartphones, and tablets.
- It can be integrated into microprocessors and other integrated circuits to enhance their memory capabilities.
Problems solved by this technology:
- The specific arrangement of conductive line structures and SRAM unit cells allows for a more compact and efficient design of semiconductor devices.
- It provides a solution for integrating memory storage into electronic devices without requiring additional space.
Benefits of this technology:
- The compact design of the semiconductor device allows for more efficient use of space in electronic devices.
- It improves the performance and functionality of electronic devices by providing integrated memory storage.
- The specific arrangement of components enhances the overall efficiency and reliability of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate having first and second surfaces, first to third conductive line structures disposed on the first surface, extending in a first direction, and spaced apart from each other in a second direction, and a SRAM unit cell disposed on the first surface, and including first and second inverters connected to each other, a first pass transistor connected to the first inverter, a second pass transistor connected to the second inverter, a first gate electrode included in the first inverter, and a second gate electrode included in the first pass transistor, the first inverter and the first pass transistor are disposed between the first and third conductive line structures, the second inverter and the second pass transistor are disposed between the second and third conductive line structures, and the first and second gate electrodes are disposed between the first and third conductive line structures.
