18120038. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120038 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The abstract of the patent application describes a semiconductor device that consists of two semiconductor structures bonded together through a bonding structure. The second semiconductor structure includes a pattern structure, an upper insulating layer, a stack structure with gate electrode layers and interlayer insulating layers, channel structures, separation structures, and a spacer layer.
- The first semiconductor structure is bonded to the second semiconductor structure through a bonding structure.
- The second semiconductor structure includes a pattern structure, an upper insulating layer, and a stack structure.
- The stack structure consists of gate electrode layers and interlayer insulating layers that are alternately stacked.
- Channel structures extend through the stack structure.
- Separation structures also extend through the stack structure and separate the stack structure.
- Each separation structure has a first portion that extends through the stack structure and a second portion that extends through the pattern structure.
- The second semiconductor structure further includes a spacer layer that separates the second portion of each separation structure from the pattern structure.
Potential applications of this technology:
- Semiconductor devices with improved performance and functionality.
- Enhanced integration of different semiconductor structures.
- Increased efficiency and reliability of semiconductor devices.
Problems solved by this technology:
- Improved bonding between semiconductor structures.
- Enhanced separation and isolation of different components within the device.
- Better control over the channel structures and stack structure.
Benefits of this technology:
- Higher performance and functionality of semiconductor devices.
- Improved integration and miniaturization of semiconductor components.
- Enhanced reliability and efficiency of the devices.
Original Abstract Submitted
A semiconductor device may include a first semiconductor structure including a lower substrate; and a second semiconductor structure on and bonded to the first semiconductor structure through a bonding structure. The second semiconductor structure may include: a pattern structure; an upper insulating layer on the pattern structure; a stack structure including gate electrode layers and interlayer insulating layers alternately stacked between the first semiconductor structure and the pattern structure; channel structures that extend through the stack structure; separation structures that extend through the stack structure and separate the stack structure. Each of the separation structures may include a first portion that extends through the stack structure and a second portion that extends from the first portion and extends through the pattern structure, and the second semiconductor structure further may include a spacer layer that separates the second portion of each separation structure from the pattern structure.
