18120026. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120026 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract of this patent application describes a semiconductor device that consists of a lower structure and an upper structure. The lower structure includes a first substrate, a first pad on the first substrate, and a first insulating layer that encloses the first pad. The upper structure includes a second substrate, a second pad on the second substrate, and a second insulating layer that encloses the second pad. Both the first and second pads have a first portion and a second portion, with the second portion made of the same metallic material as the first portion. The second portion of the first pad is in contact with the second portion of the second pad, and the first insulating layer is in contact with the second insulating layer.
- The semiconductor device has a lower structure and an upper structure.
- The lower structure consists of a first substrate, a first pad, and a first insulating layer.
- The upper structure consists of a second substrate, a second pad, and a second insulating layer.
- Both the first and second pads have two portions, with the second portion made of the same metallic material as the first portion.
- The second portion of the first pad is in contact with the second portion of the second pad.
- The first insulating layer is in contact with the second insulating layer.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design
Problems solved by this technology:
- Improved electrical conductivity between pads
- Enhanced insulation between pads
Benefits of this technology:
- Increased efficiency and reliability of semiconductor devices
- Improved performance of integrated circuits
- Enhanced functionality of electronic devices
Original Abstract Submitted
A semiconductor device may include a lower structure including a first substrate, a first pad on the first substrate, and a first insulating layer enclosing the first pad, and an upper structure including a second substrate, a second pad on the second substrate, and a second insulating layer enclosing the second pad. Each of the first and second pads may include a first portion and a second portion on the first portion. The second portion may include the same metallic material as the first portion. The second portion of the first pad may be in contact with the second portion of the second pad, and the first insulating layer may be in contact with the second insulating layer.
