18118993. LIGHT EMITTING DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
LIGHT EMITTING DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Younghwan Park of Suwon-si (KR)
Dongchul Shin of Suwon-si (KR)
LIGHT EMITTING DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18118993 titled 'LIGHT EMITTING DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a light emitting device that includes several layers of nitride semiconductor materials with different lattice constants. The device includes a first nitride semiconductor layer doped with an n-type dopant, an active layer with a larger lattice constant than the first layer, a stress relaxation layer with a lattice constant between the first and second layers, and a second nitride semiconductor layer doped with a p-type dopant. The active layer has an upper active region on the upper surface of the stress relaxation layer and a side active region on the side surface of the stress relaxation layer.
- The light emitting device includes multiple layers of nitride semiconductor materials with different lattice constants.
- The active layer includes a nitride semiconductor material with indium, which contributes to the emission of light.
- The stress relaxation layer helps to reduce the strain between the different lattice constants of the adjacent layers.
- The upper active region and side active region provide different emission characteristics.
- The device can emit light efficiently due to the optimized structure and composition of the layers.
Potential applications of this technology:
- Solid-state lighting: The light emitting device can be used in LED lighting applications for energy-efficient and long-lasting illumination.
- Display technology: The device can be utilized in display panels for high-resolution and vibrant color reproduction.
- Optical communication: The efficient light emission of the device can be beneficial for optical communication systems, such as fiber optics.
Problems solved by this technology:
- Strain relaxation: The stress relaxation layer helps to reduce the strain between layers with different lattice constants, improving the overall performance and reliability of the device.
- Efficient light emission: The optimized structure and composition of the layers enable efficient light emission, resulting in brighter and more energy-efficient light sources.
Benefits of this technology:
- Improved performance: The device's optimized structure and composition enhance its light emission efficiency and overall performance.
- Energy efficiency: The efficient light emission of the device contributes to energy savings in various applications.
- Versatility: The device can be used in a wide range of applications, including lighting, displays, and optical communication systems.
Original Abstract Submitted
A light emitting device includes a light emitting device includes: a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant; an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer including a nitride semiconductor material including indium; a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer including a nitride semiconductor material including indium; and a second nitride semiconductor layer provide on the active layer and doped with a p-type dopant, wherein the active layer includes: an upper active region provided on an upper surface of the stress relaxation layer, and a side active region provided on a side surface of the stress relaxation layer.
