18118776. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jiwon Kim of Suwon-si (KR)

Jiyoung Kim of Suwon-si (KR)

Dohyung Kim of Suwon-si (KR)

Sukkang Sung of Suwon-si (KR)

Takuya Futatsuyama of Suwon-si (KR)

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18118776 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The disclosed semiconductor device consists of a peripheral circuit structure, a cell array structure, and a backside structure. The cell array structure includes a stack structure with gate electrodes and interlayer dielectric layers that are alternately stacked. Through plugs extend through the stack structure, with each plug having a first surface adjacent to the backside structure and a second surface opposite to the first surface. A middle circuit structure is connected to the peripheral circuit structure and is located between the stack structure and the peripheral circuit structure. A connection plug connects the middle circuit structure to the backside structure. The through plugs include a first through plug connected to the backside structure through the first surface and a second through plug connected to the middle circuit structure through the second surface.

• The semiconductor device has a complex structure with multiple circuit structures and through plugs.
• The stack structure in the cell array includes gate electrodes and interlayer dielectric layers.
• The through plugs extend through the stack structure and connect the backside structure and the middle circuit structure.
• The middle circuit structure is connected to the peripheral circuit structure.
• The first through plug connects the backside structure through the first surface.
• The second through plug connects the middle circuit structure through the second surface.

Potential Applications

• This semiconductor device can be used in various electronic devices that require complex circuit structures, such as smartphones, tablets, and computers.
• It can be utilized in memory devices, processors, and other integrated circuits.

Problems Solved

• The disclosed device solves the problem of connecting the backside structure and the middle circuit structure in a semiconductor device with a stack structure.
• It addresses the challenge of integrating multiple circuit structures in a compact and efficient manner.

Benefits

• The semiconductor device offers improved connectivity and functionality due to the integration of the peripheral circuit structure, cell array structure, and backside structure.
• It allows for more efficient use of space and resources, resulting in smaller and more compact electronic devices.
• The device enables higher performance and faster data processing in electronic devices.

Original Abstract Submitted

Disclosed is a semiconductor device comprising a peripheral circuit structure on a first substrate, a cell array structure on the peripheral circuit structure, and a backside structure on the cell array structure. The cell array structure includes a stack structure including gate electrodes and interlayer dielectric layers that are alternately stacked, through plugs that extend in a first direction through the stack structure and each including a first surface adjacent to the backside structure and a second surface opposite to the first surface, a middle circuit structure between the stack structure and the peripheral circuit structure and connected to the peripheral circuit structure, and a connection plug connected to the middle circuit structure and the backside structure. The through plugs include a first through plug connected through the first surface to the backside structure, and a second through plug connected through the second surface to the middle circuit structure.