18118684. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Kiyohisa Ichikawa of Buzen Fukuoka (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18118684 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Simplified Explanation

The semiconductor device described in the abstract includes an insulating base material with metal pads, a semiconductor element, and resins for protection and sealing.

  • Insulating base material with metal pads:
 - The device has an insulating base material with metal pads on the first surface.
 - The metal pads are separate from each other, providing connection points for components.
  • Semiconductor element and resins:
 - A semiconductor element is placed on one of the metal pads.
 - A first resin covers part of the first surface, while a second resin seals the semiconductor element.
  • Potential applications of this technology:
 - Integrated circuits
 - Electronic devices
 - Sensors
  • Problems solved by this technology:
 - Protecting semiconductor elements from external factors
 - Providing a stable base for electronic components
  • Benefits of this technology:
 - Improved durability and reliability of semiconductor devices
 - Enhanced performance of electronic systems
  • Potential commercial applications of this technology:
 - Consumer electronics
 - Automotive industry
 - Telecommunications sector
  • Possible prior art:
 - Similar semiconductor devices with resin protection and metal pads have been used in the industry for years.
      1. Unanswered Questions:
        1. How does the size of the metal pads impact the performance of the semiconductor device?

The abstract does not provide information on the size of the metal pads and its influence on the device's functionality. Further research or experimentation may be needed to determine the optimal size for optimal performance.

        1. What materials are used for the insulating base material and resins in the semiconductor device?

The abstract does not specify the exact materials used for the insulating base material and resins. Understanding the materials' properties and compatibility is crucial for the device's overall effectiveness and longevity.


Original Abstract Submitted

A semiconductor device includes an insulating base material including first and second surfaces, the second surface being a back surface at a side opposite to the first surface; a plurality of metal pads provided on the first surface of the insulating base material, the plurality of metal pads being apart from each other; a first semiconductor element provided on one of the metal pads; a first resin provided on the first surface of the insulating base material, the first surface of the insulating base material including first and second regions, the plurality of metal pads being provided on the first region of the first surface, the first resin covering the second region of the first surface; and a second resin provided at the first surface side of the insulating base material, the second resin contacting the first resin and sealing the semiconductor element at the first surface side.

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