18118235. MEMORY DEVICE AND PRECHARGING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 MEMORY DEVICE AND PRECHARGING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND PRECHARGING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE AND PRECHARGING METHOD THEREOF
Organization Name
Inventor(s)
MEMORY DEVICE AND PRECHARGING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18118235 titled 'MEMORY DEVICE AND PRECHARGING METHOD THEREOF
Simplified Explanation
The abstract describes a memory device and method for precharging a decoded address in a memory cell array.
- Memory device with row decoder and interface circuit
- Row decoder selects row based on decoded address
- Interface circuit decodes row address and precharges decoded address
- Memory device has first and second modes for precharging
- Precharge signal determines precharging in second mode
Potential Applications
This technology can be applied in:
- Computer memory systems
- Embedded systems
- Mobile devices
Problems Solved
This technology solves the following problems:
- Efficient precharging of decoded row addresses
- Improved memory access speed
- Enhanced memory performance
Benefits
The benefits of this technology include:
- Faster memory access times
- Reduced power consumption
- Improved overall memory efficiency
Potential Commercial Applications
This technology has potential commercial applications in:
- Memory chip manufacturing
- Electronic devices
- Data storage systems
Possible Prior Art
One possible prior art for this technology could be:
- Precharging methods in memory devices
- Row decoding techniques in memory systems
Unanswered Questions
How does the precharge signal affect the precharging process in the second mode?
The precharge signal in the second mode determines whether the precharging of the decoded row address is initiated. However, the exact mechanism of how this signal interacts with the precharging process is not explicitly explained in the abstract.
What specific bits of the row address are decoded by the interface circuit?
The abstract mentions that a plurality of bits of the row address are decoded by the interface circuit to generate the decoded row address. However, it does not specify which specific bits are involved in this decoding process.
Original Abstract Submitted
A memory device and a method of precharging a decoded address are provided. The memory device includes a memory cell array comprising a plurality of rows; a row decoder configured to select a row to be activated from among the plurality of rows based on a decoded row address; and an interface circuit configured to: generate the decoded row address based on decoding a plurality of bits of a row address, transfer the decoded row address to the row decoder, in a first mode of the memory device, precharge the decoded row address that is transferred to the row decoder, and in a second mode of the memory device, determine whether a precharge signal is received in the second mode, and precharge the decoded row address based on the precharge signal.
