18118175. FABRICATING METHOD FOR TEST ELEMENT GROUP simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
FABRICATING METHOD FOR TEST ELEMENT GROUP
Organization Name
Inventor(s)
Min Hyung Kang of Suwon-si (KR)
Chan Geun Ahn of Suwon-si (KR)
FABRICATING METHOD FOR TEST ELEMENT GROUP - A simplified explanation of the abstract
This abstract first appeared for US patent application 18118175 titled 'FABRICATING METHOD FOR TEST ELEMENT GROUP
Simplified Explanation
The fabricating method for a test element group involves creating test areas in a scribe lane area by forming fins on a substrate, covering some of the fins with a masking material, and performing selective epitaxial growth on the fins by injecting a gas.
- Test areas are generated in a scribe lane area by forming fins on a substrate.
- Some of the fins are covered with a masking material.
- Selective epitaxial growth is performed by injecting a gas onto the fins, excluding those covered with the masking material.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit testing
Problems Solved
- Efficient fabrication of test element groups
- Precise control over epitaxial growth process
Benefits
- Improved accuracy in testing
- Cost-effective fabrication method
- Enhanced performance of test elements
Original Abstract Submitted
A fabricating method for a test element group is provided. The fabricating method for a test element group includes fabricating test areas generated in a scribe lane area, wherein fabricating of the test areas includes forming a plurality of fins protruding in a first direction on a substrate, covering at least some of the plurality of fins with a masking material, and performing selective epitaxial growth by injecting a gas onto the plurality of fins. The gas is not injected onto the at least some of the plurality of fins that are covered with the masking material, such that the epitaxial growth does not occur on the fins covered with the masking material.
