18117498. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Seiya Sakakura of Hakusan Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18117498 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract consists of a first semiconductor layer with impurities of a first conductivity type, a second semiconductor layer with lower impurities of the first conductivity type, and a third semiconductor layer with a high hydrogen concentration.
- The device includes a first semiconductor layer with impurities of a first conductivity type.
- A second semiconductor layer is provided on top of the first semiconductor layer with lower impurities of the first conductivity type.
- A third semiconductor layer is embedded within the first semiconductor layer with a high hydrogen concentration of 5×10^20 atoms/cm3 or more.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Solar cells
- LED production
Problems Solved
This technology helps in:
- Improving the performance of semiconductor devices
- Enhancing the efficiency of solar cells
- Increasing the brightness of LEDs
Benefits
The benefits of this technology include:
- Higher conductivity in semiconductor layers
- Improved efficiency in energy conversion
- Enhanced performance of electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor industry
- Renewable energy sector
- Electronics manufacturing
Possible Prior Art
There is no prior art mentioned in this article.
Unanswered Questions
How does the high hydrogen concentration in the third semiconductor layer impact the overall performance of the device?
The high hydrogen concentration in the third semiconductor layer could potentially affect the stability and reliability of the device. Further research is needed to understand the exact implications of this concentration on the device's performance.
What are the specific methods used to embed the third semiconductor layer within the first semiconductor layer?
The patent application does not provide details on the specific techniques or processes used to embed the third semiconductor layer within the first semiconductor layer. Further information on the fabrication methods would be necessary to replicate the technology.
Original Abstract Submitted
Provided is a semiconductor device including: a first semiconductor layer of a first conductivity type, and the first semiconductor layer including first conductivity type impurities; a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, and the second semiconductor layer including lower first conductivity type impurities than the first semiconductor layer; and a third semiconductor layer provided in the first semiconductor layer, and the third semiconductor layer including a hydrogen concentration of 5×10atoms/cmor more.
