18116684. PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ting-Pi Sun of Taichung City (TW)
Hsin-Chang Lee of Zhubei City (TW)
PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18116684 titled 'PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
- Method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask
- Formation of a nanotube layer with carbon nanotubes
- Attachment of nanotube layer to a pellicle frame
- Solvent dipping treatment with bubbles in a solvent applied to the nanotube layer
Potential Applications
- Manufacturing of pellicles for EUV photomasks - Semiconductor industry for lithography processes
Problems Solved
- Ensures uniform attachment of nanotube layer to pellicle frame - Improves durability and stability of pellicle for EUV photomasks
Benefits
- Enhanced performance and longevity of EUV photomasks - Cost-effective manufacturing process - Improved quality and reliability in semiconductor manufacturing
Original Abstract Submitted
In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a nanotube layer including a plurality of carbon nanotubes is formed, the nanotube layer is attached to a pellicle frame, and a solvent dipping treatment is performed to the nanotube layer by applying bubbles in a solvent to the nanotube layer.
