18116475. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18116475 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes an active pattern, a gate structure, a bit-line structure, a storage node contact, and a landing pad with specific sidewall configurations.
- The semiconductor device has an active pattern.
- It includes a gate structure on the active pattern.
- A bit-line structure is electrically connected to the active pattern.
- A storage node contact is also electrically connected to the active pattern.
- The landing pad, which is connected to the storage node contact, has specific flat and curved sidewall configurations.
- Potential Applications:**
- Memory devices - Integrated circuits - Microprocessors
- Problems Solved:**
- Improved electrical connectivity in semiconductor devices - Enhanced performance and reliability of memory devices
- Benefits:**
- Better electrical connections - Increased efficiency in semiconductor devices - Enhanced overall performance of electronic devices
Original Abstract Submitted
A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device includes an active pattern; a gate structure on the active pattern; a bit-line structure electrically connected to the active pattern; a storage node contact electrically connected to the active pattern; and a landing pad electrically connected to the storage node contact, wherein the landing pad includes a first pad flat sidewall and a second pad flat sidewall that are opposite to each other, a third pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, a fourth pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, a first pad curved sidewall between the first pad flat sidewall and the third pad flat sidewall, and a second pad curved sidewall between the first pad flat sidewall and the fourth pad flat sidewall.
