18116107. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seokhyeon Yoon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18116107 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate and a SRAM cell with a pass-gate transistor, a pull-down transistor, and a pull-up transistor on the substrate. The SRAM cell has an active fin extending in a first direction, and the pass-gate transistor and the pull-down transistor are positioned adjacent to each other on the active fin in the first direction. The pass-gate transistor includes first channel layers, a first gate electrode, first source/drain regions, and first inner spacers. The pull-down transistor includes second channel layers, a second gate electrode, second source/drain regions, and second inner spacers. One of the first inner spacers and one of the second inner spacers are located at the same height level and have different thicknesses in the first direction.
- The patent application describes a semiconductor device with a specific configuration of a SRAM cell and its components.
- The SRAM cell includes a pass-gate transistor and a pull-down transistor positioned adjacent to each other on an active fin.
- The pass-gate transistor and the pull-down transistor have different layers, electrodes, regions, and spacers.
- The spacers on the pass-gate transistor and the pull-down transistor have different thicknesses.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices that require high-speed and low-power memory, such as smartphones, tablets, and computers.
- It can also be utilized in data centers and servers to enhance memory performance and efficiency.
Problems solved by this technology:
- The specific configuration of the SRAM cell helps to improve the overall performance and reliability of the semiconductor device.
- The different layers, electrodes, regions, and spacers in the pass-gate transistor and the pull-down transistor contribute to better functionality and integration.
Benefits of this technology:
- The semiconductor device offers improved memory performance, including faster read and write speeds.
- It provides enhanced power efficiency, allowing for longer battery life in portable electronic devices.
- The specific configuration and design of the SRAM cell contribute to a more reliable and stable operation of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate, a SRAM cell including a pass-gate transistor, a pull-down transistor, and a pull-up transistor on substrate. The SRAM cell includes an active fin extending in a first direction, the pass-gate transistor and the pull-down transistor are disposed adjacent to each other on the active fin in the first direction, the pass-gate transistor includes first channel layers, a first gate electrode, first source/drain regions, and first inner spacers, the pull-down transistor includes second channel layers, a second gate electrode, second source/drain regions, and second inner spacers, and one of the first inner spacers and one of the second inner spacers are disposed on the same height level and have different thicknesses in the first direction.
