18115617. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
Contents
SEMICONDUCTOR DEVICE
Organization Name
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Inventor(s)
Hiroko Itokazu of Kawasaki Kanagawa (JP)
Yoko Iwakaji of Meguro Tokyo (JP)
Keiko Kawamura of Yokohama Kanagawa (JP)
Tomoko Matsudai of Shibuya Tokyo (JP)
Kaori Fuse of Yokohama Kanagawa (JP)
Takako Motai of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18115617 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple electrodes and insulating films to control the flow of electricity within the semiconductor part. Here are the key points of the innovation:
- Semiconductor device with semiconductor part, first to fourth electrodes, and a control electrode
- First and second electrodes on back and front surfaces of the semiconductor part
- Third electrode between the first and second electrodes with a first insulating film
- Fourth and control electrodes between the second and third electrodes
- Fourth electrode extends into the semiconductor part from the front side with a second insulating film
- Fourth electrode positioned between the semiconductor part and the control electrode
- First insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode
- Fourth electrode faces the control electrode with a third insulating film and is electrically connected to the third electrode
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- Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as transistors, diodes, and integrated circuits.
- Problems Solved
This technology helps in controlling the flow of electricity within the semiconductor part, improving the efficiency and performance of the semiconductor device.
- Benefits
- Enhanced control over the flow of electricity - Improved efficiency and performance of semiconductor devices - Potential for miniaturization and increased functionality
- Potential Commercial Applications
The semiconductor device described in this patent application could find applications in electronics, telecommunications, computing, and other industries where semiconductor devices are used.
- Possible Prior Art
One possible prior art for this technology could be the development of semiconductor devices with multiple electrodes and insulating films for controlling the flow of electricity within the device.
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- Unanswered Questions
- How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the advantages of this technology over existing solutions.
- What are the potential limitations or challenges in implementing this technology on a larger scale for commercial applications?
The article does not address the potential limitations or challenges in implementing this technology on a larger scale for commercial applications. Factors such as manufacturing costs, scalability, and compatibility with existing systems would need to be considered.
Original Abstract Submitted
A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.
