18115617. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Hiroko Itokazu of Kawasaki Kanagawa (JP)

Yoko Iwakaji of Meguro Tokyo (JP)

Keiko Kawamura of Yokohama Kanagawa (JP)

Tomoko Matsudai of Shibuya Tokyo (JP)

Kaori Fuse of Yokohama Kanagawa (JP)

Takako Motai of Yokohama Kanagawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18115617 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes multiple electrodes and insulating films within a semiconductor part. Here is a simplified explanation of the patent application:

• The semiconductor device consists of a semiconductor part with electrodes placed on its front and back surfaces.
• There are first to fourth electrodes, with the third electrode positioned between the first and second electrodes.
• The fourth and control electrodes are located between the second and third electrodes, extending into the semiconductor part from the front side.
• Insulating films are interposed between the electrodes to prevent electrical interference.
• The fourth electrode is electrically connected to the third electrode and faces the control electrode with an insulating film in between.

1. 1. 1. Potential Applications

This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as sensors, transistors, and integrated circuits.

1. 1. 1. Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by reducing electrical interference and enhancing the overall functionality of the device.

1. 1. 1. Benefits

The benefits of this technology include increased reliability, improved electrical performance, and enhanced integration capabilities in semiconductor devices.

1. 1. 1. Potential Commercial Applications

The semiconductor device described in the patent application could find commercial applications in industries such as telecommunications, consumer electronics, automotive, and healthcare.

1. 1. 1. Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor devices with multiple electrodes and insulating films to improve performance and functionality.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing semiconductor devices in terms of efficiency and performance?

This article does not provide a direct comparison with existing semiconductor devices in terms of efficiency and performance.

1. 1. 1. 1. What are the specific materials used in the fabrication of the semiconductor device and how do they impact its overall functionality?

The article does not delve into the specific materials used in the fabrication of the semiconductor device and their impact on functionality.

Original Abstract Submitted

A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.