18115165. POWER SEMICONDUCTOR DEVICE simplified abstract (Hyundai Motor Company)
Contents
- 1 POWER SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the buried gate design improve the performance of the power semiconductor device?
- 1.11 What are the specific characteristics of the silicon carbide (SiC) semiconductor layer that make it suitable for high-power applications?
- 1.12 Original Abstract Submitted
POWER SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Seok Lee of Suwon-si (KR)
POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18115165 titled 'POWER SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a power semiconductor device with a silicon carbide (SiC) semiconductor layer, buried gates, base regions, source regions, and a source electrode.
- Silicon carbide (SiC) semiconductor layer
- Buried first and second gates
- First base region with first conductive type
- Second base region with second conductive type
- First source region with second conductive type
- Second source region with first conductive type
- Source electrode for contact with source regions
Potential Applications
The technology described in this patent application could be applied in high-power electronics, such as in electric vehicles, renewable energy systems, and industrial motor drives.
Problems Solved
This technology solves the problem of improving the efficiency and performance of power semiconductor devices by utilizing silicon carbide (SiC) material and optimizing the design of the device structure.
Benefits
The benefits of this technology include higher efficiency, faster switching speeds, lower power losses, and increased reliability in high-power applications.
Potential Commercial Applications
The potential commercial applications of this technology include power electronics for electric vehicles, solar inverters, wind turbines, and industrial motor drives.
Possible Prior Art
One possible prior art for this technology could be the use of silicon-based power semiconductor devices, which may not offer the same level of performance and efficiency as silicon carbide (SiC) devices.
Unanswered Questions
How does the buried gate design improve the performance of the power semiconductor device?
The buried gate design helps to reduce gate capacitance and improve switching speed, but the specific mechanisms behind this improvement are not detailed in the abstract.
What are the specific characteristics of the silicon carbide (SiC) semiconductor layer that make it suitable for high-power applications?
The abstract mentions the use of a silicon carbide (SiC) semiconductor layer, but it does not elaborate on the specific properties of SiC that make it advantageous for power semiconductor devices.
Original Abstract Submitted
A power semiconductor device includes a silicon carbide (SiC) semiconductor layer, a first gate and a second gate buried in the semiconductor layer, a first base region positioned at least at one side of the first gate and having a first conductive type, a second base region positioned at least at one side of the second gate and a second conductive type, a first source region positioned at least at one side of the first gate to make contact with the first base region and the second base region and having the second conductive type, a second source region positioned at least at one side of the second gate to make contact with the first base region and the second base region and having the first conductive type, and a source electrode positioned over the semiconductor layer to make contact with the first source region and the second source region.
