18113445. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Takako Motai of Yokohama Kanagawa (JP)

Yoko Iwakaji of Meguro Tokyo (JP)

Kaori Fuse of Yokohama Kanagawa (JP)

Keiko Kawamura of Yokohama Kanagawa (JP)

Kentaro Ichinoseki of Higashimurayama Tokyo (JP)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18113445 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor substrate with a cell region and a termination region. The termination region surrounds the cell region and consists of multiple layers with varying concentrations of a conductive impurity, as well as conductive layers connected to the diffusion layers.

• The semiconductor device has a termination region with multiple diffusion layers containing a conductive impurity, as well as conductive layers connected to these diffusion layers.
• The diffusion layers in the termination region have different concentrations of the conductive impurity, with the outermost layers having lower concentrations.
• The conductive layers in the termination region are electrically connected to the diffusion layers and have outer end portions.
• The outer end portions of the conductive layers are positioned below the diffusion layers in the termination region.

Potential Applications

This technology could be applied in:

• Power electronics
• Semiconductor manufacturing

Problems Solved

This technology helps in:

• Improving the efficiency of semiconductor devices
• Enhancing the performance of power electronics

Benefits

The benefits of this technology include:

• Increased conductivity
• Better control of impurity concentrations

Potential Commercial Applications

This technology could be commercially apply in:

• Power semiconductor devices
• Integrated circuits

Possible Prior Art

One possible prior art for this technology could be:

• Semiconductor devices with diffusion layers and conductive layers

Unanswered Questions

How does this technology impact the overall cost of semiconductor manufacturing?

The abstract does not provide information on the cost implications of implementing this technology.

What specific improvements in performance can be expected from this innovation?

The abstract does not detail the exact performance enhancements that can be achieved with this technology.

Original Abstract Submitted

A semiconductor device includes a semiconductor substrate, a cell region provided, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductive impurity, a plurality of second diffusion layers each disposed on an outer side of each of the plurality of first diffusion layers and having a concentration of the first conductive impurity lower than that of the first diffusion layers, and a plurality of conductive layers opposing the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate, the plurality of conductive layers electrically connected to the first diffusion layers, the plurality of conductive layers each having an outer end portion. On a lower side of the outer end portion, any one of the plurality of second diffusion layers is present.