18112312. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Doohyun Lee of Suwon-si (KR)

Heonjong Shin of Suwon-si (KR)

Seon-Bae Kim of Suwon-si (KR)

Jaeran Jang of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18112312 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes various components such as a substrate, cell region, dummy region, border region, active pattern, device isolation layer, source/drain patterns, channel patterns, cell gate electrodes, active contacts, dummy gate electrodes, dummy contacts, interlayer insulating layer, and a dam structure.

• The substrate of the semiconductor device has a cell region, a dummy region, and a border region between them.
• The cell region contains an active pattern, which is covered by a device isolation layer.
• Source/drain patterns are placed on the active pattern, and channel patterns are present between the source/drain patterns.
• Cell gate electrodes cross the channel patterns in a different direction.
• Active contacts are located on the cell region and connected to the source/drain patterns and cell gate electrodes.
• Dummy gate electrodes are present on both the dummy region and the device isolation layer.
• Dummy contacts are placed on the dummy region and on the side surface of each dummy gate electrode.
• An interlayer insulating layer is present on the side surface of each dummy gate electrode.
• A dam structure is located on the border region.

Potential applications of this technology:

• This semiconductor device design can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
• It can be applied in the manufacturing of integrated circuits for improved performance and functionality.

Problems solved by this technology:

• The design helps in reducing the size of the semiconductor device while maintaining its functionality.
• It provides better isolation between different regions of the device, preventing interference and improving overall performance.

Benefits of this technology:

• The compact design allows for more efficient use of space in electronic devices.
• The improved isolation and functionality enhance the performance of the semiconductor device.
• The design can potentially lead to cost savings in manufacturing processes.

Original Abstract Submitted

In some embodiments, the semiconductor device includes a substrate comprising a cell region, a dummy region spaced apart from the cell region in a first direction, and a border region between the cell region and the dummy region, an active pattern on the cell region, a device isolation layer on the substrate, source/drain patterns on the active pattern and channel patterns between the source/drain patterns, cell gate electrodes crossing the channel patterns in a second direction, active contacts disposed on the cell region and between the cell gate electrodes and coupled to the source/drain patterns, dummy gate electrodes on the dummy region and on the device isolation layer, dummy contacts on the dummy region and on a side surface of each of the dummy gate electrodes, an interlayer insulating layer on the side surface of each of the dummy gate electrodes, and a dam structure on the border region.