18112213. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Yuhki Fujino of Kanazawa Ishikawa (JP)

Tsuyoshi Kachi of Kanazawa Ishikawa (JP)

Katsura Miyashita of Naka Kanagawa (JP)

Shingo Sato of Kanawawa Ishikawa (JP)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18112213 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor part with multiple layers, electrodes connected to different layers, a gate electrode, an interlayer insulating film, and a third semiconductor layer with specific regions.

• The semiconductor device consists of a semiconductor part with a first and second semiconductor layer.
• The device has a first electrode connected to the first semiconductor layer and a second electrode connected to the second semiconductor layer.
• A gate electrode and an interlayer insulating film are present on the front surface side of the semiconductor part.
• A third semiconductor layer is included with specific regions in contact with the second semiconductor layer and the second electrode.

Potential Applications

This semiconductor device could be used in various electronic applications such as integrated circuits, power electronics, and sensors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the electrical connections and insulating layers.

Benefits

The semiconductor device offers enhanced functionality, reliability, and compactness in electronic devices. It also provides better control over the flow of electrical current.

Potential Commercial Applications

The technology can be applied in the manufacturing of advanced electronic devices, leading to the development of faster and more energy-efficient products.

Possible Prior Art

Prior art related to semiconductor devices with multiple layers and electrodes can be found in existing patents and research papers. However, the specific configuration described in this patent application may be unique.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be required to evaluate the advantages of this technology.

What are the potential challenges in implementing this semiconductor device on a large scale for commercial production?

The article does not address the potential challenges in implementing this semiconductor device on a large scale for commercial production. Factors such as cost, scalability, and manufacturing processes could be significant considerations that need to be explored further.

Original Abstract Submitted

A semiconductor device includes: a semiconductor part including a first semiconductor layer and a second semiconductor layer in contact with the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part; a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part; a gate electrode; an interlayer insulating film electrically insulating the gate electrode and the second electrode on the front surface side of the semiconductor part; and a third semiconductor layer having: a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part; and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction.