18112213. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Yuhki Fujino of Kanazawa Ishikawa (JP)
Tsuyoshi Kachi of Kanazawa Ishikawa (JP)
Katsura Miyashita of Naka Kanagawa (JP)
Shingo Sato of Kanawawa Ishikawa (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18112213 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor part with multiple layers, electrodes connected to different layers, a gate electrode, an interlayer insulating film, and a third semiconductor layer with specific regions.
- The semiconductor device consists of a semiconductor part with a first and second semiconductor layer.
- The device has a first electrode connected to the first semiconductor layer and a second electrode connected to the second semiconductor layer.
- A gate electrode and an interlayer insulating film are present to electrically insulate certain components.
- A third semiconductor layer with specific regions is included in the device.
Potential Applications
The semiconductor device could be used in various electronic applications such as integrated circuits, power electronics, and sensors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing better electrical connections and insulation between different components.
Benefits
The semiconductor device offers enhanced functionality, improved reliability, and increased performance compared to traditional semiconductor devices.
Potential Commercial Applications
The semiconductor device could find applications in industries such as telecommunications, automotive, consumer electronics, and renewable energy.
Possible Prior Art
Prior art in semiconductor devices includes similar structures with multiple layers, electrodes, and insulating films to improve device performance and functionality.
Unanswered Questions
How does this semiconductor device compare to existing technologies in terms of efficiency and performance?
The article does not provide a direct comparison between this semiconductor device and existing technologies in terms of efficiency and performance. Further research or testing may be needed to determine the specific advantages of this device over others.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not detail the specific manufacturing processes involved in producing this semiconductor device. Understanding the manufacturing processes could provide insights into the scalability and cost-effectiveness of implementing this technology.
Original Abstract Submitted
A semiconductor device includes: a semiconductor part including a first semiconductor layer and a second semiconductor layer in contact with the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part; a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part; a gate electrode; an interlayer insulating film electrically insulating the gate electrode and the second electrode on the front surface side of the semiconductor part; and a third semiconductor layer having: a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part; and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction.
