18112202. IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Taeyoung Song of Suwon-si (KR)

Eun Sub Shim of Suwon-si (KR)

IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18112202 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The abstract describes a method of fabricating an image sensor using a semiconductor substrate. The process involves creating trenches in the substrate to define pixel regions, doping the trenches with dopants of different conductivity types, forming an insulating liner pattern in the trenches, performing a thermal treatment process, and filling the trenches with a filling pattern.

• The method involves creating trenches in a semiconductor substrate to define pixel regions.
• Dopants of a first conductivity type are then added to the trenches.
• Dopants of a second conductivity type are added to the trenches after the first type of dopants.
• An insulating liner pattern is formed in the trenches.
• A thermal treatment process is performed on the substrate.
• The trenches are filled with a filling pattern.

Potential applications of this technology:

• Image sensors for digital cameras, smartphones, and other electronic devices.
• Surveillance cameras and security systems.
• Medical imaging devices such as X-ray machines and ultrasound scanners.

Problems solved by this technology:

• Improved performance and sensitivity of image sensors.
• Enhanced image quality and resolution.
• Reduction in noise and distortion in captured images.

Benefits of this technology:

• Higher efficiency and accuracy in capturing and processing images.
• Increased sensitivity to light, resulting in better low-light performance.
• Improved overall image quality and sharpness.
• Cost-effective manufacturing process for image sensors.

Original Abstract Submitted

A method of fabricating an image sensor includes providing a semiconductor substrate, forming a trench in the semiconductor substrate to define pixel regions, doping the trench with dopants of a first conductivity type, doping the trench with dopants of a second conductivity type after doping the trench with dopants of the first conductivity type, forming an insulating liner pattern in the trench after the doping of the trench, performing a first thermal treatment process on the semiconductor substrate after forming the insulating liner pattern, and forming a filling pattern filling an inner space of the trench after performing the first thermal treatment process. A diffusion coefficient of the dopants of the first conductivity type is greater than a diffusion coefficient of the dopants of the second conductivity type. The first thermal treatment process diffuses the dopants of the first and second conductivity types into the semiconductor substrate simultaneously.