18105955. METHOD FOR FORMING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD FOR FORMING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tae-Yeol Kim of Hwaseong-si (KR)
METHOD FOR FORMING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18105955 titled 'METHOD FOR FORMING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes an interlayer insulating layer on a substrate, a conductive line on the interlayer insulating layer, and a contact plug connecting the conductive line. The contact plug has an upper pattern that penetrates the interlayer insulating layer and protrudes upward from its top surface. The upper pattern consists of a first portion that penetrates the upper region of the interlayer insulating layer and a second portion that protrudes upward from the top surface. The width of the lower region of the second portion is greater than the width of the upper region in a direction parallel to the top surface of the substrate.
- The semiconductor device includes an interlayer insulating layer, a conductive line, and a contact plug.
- The contact plug has an upper pattern that penetrates the interlayer insulating layer and protrudes upward from its top surface.
- The upper pattern consists of a first portion that penetrates the upper region of the interlayer insulating layer.
- The upper pattern also includes a second portion that protrudes upward from the top surface.
- The width of the lower region of the second portion is greater than the width of the upper region in a direction parallel to the top surface of the substrate.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
- Improved connectivity between conductive lines and contact plugs
- Enhanced performance and reliability of semiconductor devices
Benefits
- Increased efficiency in semiconductor manufacturing processes
- Improved functionality and performance of electronic devices
- Enhanced reliability and durability of integrated circuits.
Original Abstract Submitted
A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.
