18105164. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Kentaro Ichinoseki of Higashimurayama Tokyo (JP)

Keiko Kawamura of Yokohama Kanagawa (JP)

Tatsuya Nishiwaki of Yokohama Kanagawa (JP)

Kohei Oasa of Setagaya Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18105164 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor part with first to third electrodes, where the third electrode is electrically insulated from the semiconductor part via an insulating space. The control electrode consists of first and second portions, with the first portion facing the insulating space via the third electrode.

• The semiconductor device includes a semiconductor part with first to third electrodes.
• The third electrode is electrically insulated from the semiconductor part via an insulating space.
• The control electrode is divided into first and second portions, with the first portion facing the insulating space via the third electrode.

Potential Applications

This technology could be applied in:

• Power electronics
• Semiconductor devices
• Integrated circuits

Problems Solved

This technology helps solve:

• Electrical insulation issues
• Control electrode design challenges

Benefits

The benefits of this technology include:

• Improved performance of semiconductor devices
• Enhanced control over electrical signals

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Electronics manufacturing
• Semiconductor industry
• Research and development

Possible Prior Art

One possible prior art for this technology could be:

• Insulated gate bipolar transistor (IGBT) technology

How does this technology compare to existing semiconductor devices in terms of efficiency and performance?

This article does not provide a direct comparison with existing semiconductor devices in terms of efficiency and performance. It would be helpful to have data or studies comparing the performance of this technology with traditional semiconductor devices.

What are the specific manufacturing processes involved in creating this semiconductor device?

The article does not detail the specific manufacturing processes involved in creating this semiconductor device. Understanding the manufacturing processes could provide insights into the scalability and cost-effectiveness of implementing this technology.

Original Abstract Submitted

A semiconductor device includes a semiconductor part, first to third and control electrodes. The first electrode is provided on a back surface of the semiconductor part; and the second electrode is provided on a front surface thereof. The third electrode is provided between the first and second electrodes. The third electrode extends into the semiconductor part from the front surface side thereof. The third electrode is electrically insulated from the semiconductor part via an insulating space between the semiconductor part and the third electrode. The control electrode includes first and second portions. The first portion is linked to the second portion and extends between the semiconductor part and the third electrode. The second portion is provided between the second electrode and the third electrode. The first portion faces the insulating space via the third electrode; and the second portion extends between the insulating space and the second electrode.