18105164. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Kentaro Ichinoseki of Higashimurayama Tokyo (JP)

Keiko Kawamura of Yokohama Kanagawa (JP)

Tatsuya Nishiwaki of Yokohama Kanagawa (JP)

Kohei Oasa of Setagaya Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18105164 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor part with first to third electrodes and a control electrode. The first electrode is on the back surface of the semiconductor part, the second electrode is on the front surface, and the third electrode is between them, extending into the semiconductor part from the front surface side. The control electrode has first and second portions, with the first portion linked to the second portion and facing the insulating space via the third electrode.

• The semiconductor device has a unique electrode configuration with the third electrode extending into the semiconductor part from the front surface side, providing precise control over the device.
• The control electrode is divided into first and second portions, allowing for efficient and effective control of the semiconductor device.

Potential Applications

The technology described in this patent application could be applied in:

• Power electronics
• Semiconductor devices
• Integrated circuits

Problems Solved

This technology helps solve issues related to:

• Precise control of semiconductor devices
• Efficient utilization of space in semiconductor components

Benefits

The benefits of this technology include:

• Improved performance of semiconductor devices
• Enhanced control capabilities
• Space-efficient design

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Electronics manufacturing
• Semiconductor industry
• Research and development

Possible Prior Art

One possible prior art for this technology could be:

• Semiconductor devices with similar electrode configurations

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This question can be answered through comparative studies and testing of the new technology against existing devices.

What are the potential limitations or drawbacks of this electrode configuration in semiconductor devices?

This question can be addressed through further research and analysis of the technology's practical applications and potential challenges.

Original Abstract Submitted

A semiconductor device includes a semiconductor part, first to third and control electrodes. The first electrode is provided on a back surface of the semiconductor part; and the second electrode is provided on a front surface thereof. The third electrode is provided between the first and second electrodes. The third electrode extends into the semiconductor part from the front surface side thereof. The third electrode is electrically insulated from the semiconductor part via an insulating space between the semiconductor part and the third electrode. The control electrode includes first and second portions. The first portion is linked to the second portion and extends between the semiconductor part and the third electrode. The second portion is provided between the second electrode and the third electrode. The first portion faces the insulating space via the third electrode; and the second portion extends between the insulating space and the second electrode.