18104328. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyo Joon Ryu of Hwaseong-si (KR)
Young Hwan Son of Hwaseong-si, (KR)
Jung Hoon Jun of Hwaseong-si (KR)
Kohji Kanamori of Seongnam-si (KR)
Jee Hoon Han of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18104328 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor memory design that includes metallic lines on a substrate, a semiconductor conduction line, and a vertical structure that penetrates both the metallic lines and the semiconductor conduction line.
- The semiconductor memory includes metallic lines, a semiconductor conduction line, and a vertical structure.
- The vertical structure consists of an upper channel film, a first lower channel film, and an upper connection channel film.
- The vertical structure connects the upper channel film and the first lower channel film between the bottom of the semiconductor conduction line and the bottom of the uppermost metallic line.
- The design also includes a cutting line that goes through the metallic lines and the semiconductor conduction line.
- The cutting line consists of an upper cutting line through the semiconductor conduction line and a lower cutting line through the metallic lines.
- The width of the upper cutting line is greater than the width of an extension line of a sidewall of the lower cutting line.
Potential applications of this technology:
- Semiconductor memories in electronic devices such as computers, smartphones, and tablets.
- Data storage solutions for various industries including automotive, aerospace, and telecommunications.
Problems solved by this technology:
- Improved performance and efficiency of semiconductor memories.
- Enhanced data storage capabilities in electronic devices.
- Simplified manufacturing process for semiconductor memories.
Benefits of this technology:
- Higher data storage capacity in smaller form factors.
- Increased speed and reliability of data access.
- Cost-effective production of semiconductor memories.
Original Abstract Submitted
A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.
