18103676. SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jen-Yuan Chang of Hsinchu (TW)

SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18103676 titled 'SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the patent application consists of two semiconductor chips, each with a first surface and a second surface. There is also a second semiconductor chip with a third surface and a fourth surface. The third surface of the second chip faces the second surface of the first chip. A dielectric filling material is used to fill the gaps between the chips.

  • The dielectric filling material is in contact with the sidewalls of the chips.
  • The width of the dielectric filling material decreases as the depth increases towards the first surface of the first chip.

Potential applications of this technology:

  • This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
  • It can be used in integrated circuits and microprocessors to improve performance and efficiency.

Problems solved by this technology:

  • The dielectric filling material helps to reduce the risk of short circuits and electrical interference between the chips.
  • The decreasing width of the dielectric filling material ensures a better fit and connection between the chips.

Benefits of this technology:

  • Improved performance and efficiency of electronic devices.
  • Enhanced reliability and durability of semiconductor devices.
  • Reduction in manufacturing costs due to improved chip integration.


Original Abstract Submitted

A semiconductor device includes a first and second semiconductor chip having a respective first surface and a second surface opposite to each other. The semiconductor device can include a second semiconductor chip having a third surface and a fourth surface opposite to each other. The third surface of the second semiconductor chip can face the second surface of the first semiconductor chip. A first portion of a dielectric filling material can be in contact with a first sidewall of the first semiconductor chip. A second portion of a dielectric filling material can be in contact with a second sidewall of the second semiconductor chip. The first and second portions of the dielectric filling material can have a width that decreases in a corresponding increasing depth toward the first surface of the first semiconductor chip.

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