18103289. METHOD OF MANUFACTURING PHOTO MASKS AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
METHOD OF MANUFACTURING PHOTO MASKS AND SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun Wei Hsu of Taichung City (TW)
METHOD OF MANUFACTURING PHOTO MASKS AND SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18103289 titled 'METHOD OF MANUFACTURING PHOTO MASKS AND SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a method for manufacturing a photo mask used in semiconductor manufacturing. The method involves obtaining an original pattern layout, determining a lower bound for the image-log-slope (ILS), adjusting the sizes of the patterns to decrease the exposure dose while maintaining ILS values above the lower bound, performing an optical proximity correction (OPC) operation on the adjusted patterns to obtain mask data, and manufacturing a photo mask using the mask data.
- The method aims to reduce the exposure dose required for the patterns on the photo mask.
- The adjustment of pattern sizes ensures that the ILS values remain above a specified lower bound.
- The OPC operation helps to improve the accuracy of the patterns on the photo mask.
- The resulting photo mask can be used in the manufacturing of semiconductors.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
Problems Solved
- Reducing the exposure dose required for patterns on a photo mask
- Maintaining acceptable ILS values during pattern size adjustment
- Improving the accuracy of patterns on a photo mask through OPC
Benefits
- Lower manufacturing costs due to reduced exposure dose
- Improved pattern accuracy on the photo mask
- Enhanced overall quality and performance of semiconductor devices.
Original Abstract Submitted
In a method of manufacturing a photo mask, an original pattern layout including a plurality of patterns, each of which is defined by an opaque area, is obtained, a lower bound of an image-log-slope (ILS) is determined, sizes of the plurality of patterns are adjusted such that an exposure dose for the plurality of patterns decreases, while ILS values of the plurality of patterns do not fall below the lower bound of the ILS, an optical proximity correction (OPC) operation is performed on the plurality of patterns of which sizes have been adjusted to obtain mask data, and a photo mask is manufactured by using the mask data.
