18103070. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
HYOJOON Ryu of HWASEONG-SI (KR)
YOUNGHWAN Son of HWASEONG-SI (KR)
JESUK Moon of HWASEONG-SI (KR)
JUNGHOON Jun of HWASEONG-SI (KR)
KOHJI Kanamori of SEONGNAM-SI (KR)
JEEHOON Han of HWASEONG-SI (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18103070 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes multiple layers, including gate layers, a channel layer, a string select gate layer, and a string select channel layer. The string select channel layer has three portions, including a first portion below the string select gate layer with a protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer with a second protruding region.
- The semiconductor device includes gate layers stacked on a substrate.
- The device has a channel layer that extends through the gate layers.
- A string select gate layer is placed on the channel layer.
- The string select channel layer extends through the string select gate layer to contact the channel layer.
- The string select channel layer has three portions: a first portion below the string select gate layer with a protruding region, a second portion that extends through the string select gate layer, and a third portion above the string select gate layer with a second protruding region.
Potential applications of this technology:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices
- Enhanced control and efficiency in electronic systems
Benefits of this technology:
- Increased speed and reliability of semiconductor devices
- Enhanced functionality and versatility in electronic systems
- Improved energy efficiency and power management
Original Abstract Submitted
A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.
