18100208. DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG DISPLAY CO., LTD.)

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DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

SAMSUNG DISPLAY CO., LTD.

Inventor(s)

YOUNGOK Park of Seoul (KR)

WONCHUL Shin of Asan-si (KR)

CHUNGHAN Shim of Cheonan-si (KR)

DONGHWAN Lee of Cheonan-si (KR)

SANGYOUNG Lim of Asan-si (KR)

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18100208 titled 'DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a display device that includes a base substrate, active patterns, and an interlayer insulating layer. The interlayer insulating layer has a higher number of Si—O bonds than Si—F bonds on its surface.

  • The display device includes a base substrate, active patterns, and an interlayer insulating layer.
  • The interlayer insulating layer has Si—O bonds and Si—F bonds on its surface.
  • The number of Si—O bonds on the surface of the interlayer insulating layer is greater than the number of Si—F bonds.

Potential applications of this technology:

  • Display devices in electronic devices such as smartphones, tablets, and televisions.
  • Touchscreen panels for interactive displays.
  • OLED or LCD screens for improved image quality.

Problems solved by this technology:

  • Provides a more stable and reliable interlayer insulating layer for display devices.
  • Reduces the risk of material degradation or failure.
  • Enhances the overall performance and longevity of the display device.

Benefits of this technology:

  • Improved durability and reliability of the display device.
  • Enhanced image quality and resolution.
  • Longer lifespan of the display device.
  • Reduced risk of material degradation or failure.


Original Abstract Submitted

A display device includes a base substrate, a first active pattern disposed on a base substrate, a second active pattern disposed on a first active pattern and including a material different from a material of a first active pattern, and an interlayer insulating layer disposed on a second active pattern and having Si—O bonds and Si—F bonds on a surface thereof, where a contact hole is defined through the interlayer insulating layer. The number of the Si—O bonds on the surface of the interlayer insulating layer is greater than the number of the Si—F bonds on the surface of the interlayer insulating layer.

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