18098765. THIN FILM TRANSISTOR, ARRAY SUBSTRATE, FABRICATING METHODS THEREOF, AND DISPLAY APPARATUS simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
Contents
THIN FILM TRANSISTOR, ARRAY SUBSTRATE, FABRICATING METHODS THEREOF, AND DISPLAY APPARATUS
Organization Name
BOE TECHNOLOGY GROUP CO., LTD.
Inventor(s)
THIN FILM TRANSISTOR, ARRAY SUBSTRATE, FABRICATING METHODS THEREOF, AND DISPLAY APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18098765 titled 'THIN FILM TRANSISTOR, ARRAY SUBSTRATE, FABRICATING METHODS THEREOF, AND DISPLAY APPARATUS
Simplified Explanation
The present disclosure describes a thin film transistor that includes various components such as a gate pattern, an active layer pattern, a gate insulating layer, a first conductive pattern, a second conductive pattern, and a first intermediate insulating layer.
- The thin film transistor consists of a gate pattern, an active layer pattern, a gate insulating layer, a first conductive pattern, a second conductive pattern, and a first intermediate insulating layer.
- The first conductive pattern and the second conductive pattern can be a source pattern and a drain pattern, respectively.
- A first through hole is provided on the first intermediate insulating layer.
- The second conductive pattern is connected to the active layer pattern through the second connecting part in the first through hole.
Potential applications of this technology:
- Thin film transistors are commonly used in electronic devices such as displays, sensors, and integrated circuits. This innovation can be applied in these devices to enhance their performance and functionality.
Problems solved by this technology:
- This thin film transistor design provides a simplified and efficient structure for connecting the source and drain patterns to the active layer pattern.
- The use of the first intermediate insulating layer and the first through hole allows for a more compact and streamlined transistor design.
Benefits of this technology:
- The simplified design of the thin film transistor reduces manufacturing complexity and cost.
- The efficient connection between the source, drain, and active layer patterns improves the overall performance and reliability of the transistor.
- The compact structure enables the integration of the thin film transistor into smaller and more portable electronic devices.
Original Abstract Submitted
The present disclosure is related to a thin film transistor. The thin film transistor may include a gate pattern; an active layer pattern; a gate insulating layer between the gate pattern and the active layer pattern; a first conductive pattern including a first pattern part and a first connecting part ; a second conductive pattern a second pattern part and a second connecting part; and a first intermediate insulating layer between the first pattern part and the second pattern part. The first conductive pattern and the second conductive pattern may be a source pattern and a drain pattern, respectively. A first through hole may be provided on the first intermediate insulating layer. The second conductive pattern may be connected to the active layer pattern through the second connecting part in the first through hole.
