18097418. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsin-Yen Huang of New Taipei City (TW)
Shao-Kuan Lee of Kaohsiung (TW)
Hsiaokang Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18097418 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes an interconnection structure and methods for forming it. The structure includes a dielectric layer, a first conductive feature, and a conductive layer. There are also barrier layers and a support layer, with an air gap between the barrier layers. The dielectric layer and support layer are exposed to the air gap.
- The structure includes a dielectric layer, a first conductive feature, and a conductive layer.
- The conductive layer has a first portion and a second portion, with the second portion placed over the first conductive feature.
- There are barrier layers in contact with the conductive layer, and a support layer in contact with the barrier layers.
- An air gap is present between the barrier layers.
- The dielectric layer and support layer are exposed to the air gap.
Potential Applications
- Integrated circuits
- Microprocessors
- Semiconductor devices
Problems Solved
- Improved interconnection structure
- Enhanced electrical performance
- Reduced signal interference
Benefits
- Better signal transmission
- Increased reliability
- Improved overall performance
Original Abstract Submitted
An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first portion and a second portion adj acent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature. The structure further includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a support layer in contact with the first and second barrier layers. An air gap is located between the first and second barrier layers, and the dielectric layer and the support layer are exposed to the air gap.
