18097265. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cherng-Shiaw Tsai of New Taipei (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18097265 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The present disclosure describes a method for forming a semiconductor device structure involving the creation of conductive features within interlayer dielectrics, the use of an etch stop layer, and the filling of openings with conductive material.
- Forming conductive features in a first interlayer dielectric
- Applying an etch stop layer on the first interlayer dielectric
- Adding a second interlayer dielectric over the etch stop layer
- Creating openings through the second interlayer dielectric and etch stop layer to expose the conductive features
- Using a first etch process in a first chamber to form the openings
- Subjecting the openings to a second etch process in a second chamber to elongate their shape
- Filling the openings with a conductive material
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and microprocessors.
Problems Solved
This method helps in improving the performance and reliability of semiconductor devices by enhancing the connectivity and conductivity of the conductive features within the structure.
Benefits
The method allows for more efficient and precise formation of semiconductor device structures, leading to enhanced functionality and overall performance of electronic devices.
Potential Commercial Applications
The technology can be utilized by semiconductor companies, electronics manufacturers, and research institutions involved in developing advanced semiconductor devices for various applications.
Possible Prior Art
Prior methods for forming semiconductor device structures may have involved different techniques for creating and filling openings in interlayer dielectrics, but this specific combination of steps and processes may be novel in the field.
Unanswered Questions
== How does this method compare to existing techniques for forming semiconductor device structures? This article does not provide a direct comparison to other methods in terms of efficiency, cost-effectiveness, or performance improvements.
== What are the specific challenges or limitations of implementing this method in semiconductor device manufacturing? The article does not address any potential challenges or limitations that may arise during the practical application of this method in semiconductor device manufacturing processes.
Original Abstract Submitted
Embodiments of the present disclosure relates to a method for forming a semiconductor device structure. The method includes including forming one or more conductive features in a first interlayer dielectric (ILD), forming an etch stop layer on the first ILD, forming a second ILD over the etch stop layer, forming one or more openings through the second ILD and the etch stop layer to expose a top surface of the one or more first conductive features, wherein the one or more openings are formed by a first etch process in a first process chamber, exposing the one or more openings to a second etch process in a second process chamber so that the shape of the or more openings is elongated, and filling the one or more openings with a conductive material.
