18094007. SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN
Organization Name
Inventor(s)
Younghwan Son of Hwaseong-si (KR)
Sanghoon Jeong of Suwon-si (KR)
Sangjun Hong of Hwaseong-si (KR)
Jeehoon Han of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18094007 titled 'SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN
Simplified Explanation
The patent application describes a semiconductor device that includes various structures and layers to improve its performance and functionality. Here are the key points:
- The device consists of a lower structure, a stack structure with gate layers and interlayer insulating layers, a vertical structure, a contact structure, and a conductive line.
- The vertical structure is located within an opening in the stack structure and includes an insulating core region, a channel semiconductor layer, data storage patterns, a first dielectric layer, and a second dielectric layer.
- The data storage patterns are positioned between the channel semiconductor layer and the gate layers, and they are spaced apart from each other.
- The first dielectric layer is located between the data storage patterns and the gate layers, while the second dielectric layer is between the data storage patterns and the channel semiconductor layer.
- The insulating core region of the vertical structure has first convex portions that are wider in regions facing the gate layers.
Potential applications of this technology:
- Semiconductor devices used in various electronic devices such as smartphones, tablets, computers, and IoT devices.
- Memory devices, such as flash memory or non-volatile memory, that require efficient data storage and retrieval.
- High-performance processors and integrated circuits that benefit from improved semiconductor device structures.
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices by optimizing the structure and arrangement of various layers and components.
- Enhanced data storage capabilities by utilizing data storage patterns and optimized dielectric layers.
- Increased efficiency and reliability of semiconductor devices by incorporating wider convex portions in the insulating core region.
Benefits of this technology:
- Higher data storage density and improved data retention capabilities.
- Enhanced performance and speed of semiconductor devices.
- Increased energy efficiency and reduced power consumption.
- Improved reliability and durability of semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a lower structure; a stack structure including gate layers and interlayer insulating layers and having an opening; a vertical structure in the opening; a contact structure on the vertical structure; and a conductive line on the contact structure. The vertical structure includes an insulating core region, a channel semiconductor layer covering side and lower surfaces of the insulating core region, data storage patterns between the channel semiconductor layer and the gate layers and spaced apart from each other, a first dielectric layer, and a second dielectric layer. At least a portion of the first dielectric layer is between the data storage patterns and the gate layers, at least a portion of the second dielectric layer is between the data storage patterns and the channel semiconductor layer, and the insulating core region includes first convex portions having increased widths in regions facing the gate layers.
