18093948. INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
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INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18093948 titled 'INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes an integrated circuit device that includes a capacitor structure. The capacitor structure consists of a bottom electrode, a supporter, a dielectric layer, and a top electrode. The bottom electrode is made up of a base electrode layer and a conductive capping layer.
- The integrated circuit device includes a capacitor structure.
- The capacitor structure consists of a bottom electrode, a supporter, a dielectric layer, and a top electrode.
- The bottom electrode is made up of a base electrode layer and a conductive capping layer.
- The base electrode layer extends in a perpendicular direction to the substrate's top surface.
- The conductive capping layer, which includes niobium nitride, is located between the base electrode layer and the dielectric layer.
Potential Applications:
- Integrated circuit devices
- Electronics manufacturing
- Semiconductor industry
Problems Solved:
- Improved capacitor structure design
- Enhanced performance and functionality of integrated circuit devices
- Addressing issues related to electrode layers and dielectric layers
Benefits:
- Increased efficiency and reliability of integrated circuit devices
- Improved electrical performance
- Enhanced manufacturing processes
- Potential for smaller and more compact devices
Original Abstract Submitted
An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.
