18093030. APPARATUS AND METHOD OF MEASURING UNIFORMITY BASED ON PUPIL IMAGE AND METHOD OF MANUFACTURING MASK BY USING THE METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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APPARATUS AND METHOD OF MEASURING UNIFORMITY BASED ON PUPIL IMAGE AND METHOD OF MANUFACTURING MASK BY USING THE METHOD

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minho Kim of Yongin-si (KR)

Hakseung Han of Hwaseong-si (KR)

Jiyoung Kim of Hwaseong-si (KR)

Jinback Park of Hwaseong-si (KR)

APPARATUS AND METHOD OF MEASURING UNIFORMITY BASED ON PUPIL IMAGE AND METHOD OF MANUFACTURING MASK BY USING THE METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18093030 titled 'APPARATUS AND METHOD OF MEASURING UNIFORMITY BASED ON PUPIL IMAGE AND METHOD OF MANUFACTURING MASK BY USING THE METHOD

Simplified Explanation

The patent application describes an apparatus and method for measuring pattern uniformity and manufacturing masks. The measurement apparatus includes a light source, a stage to support the measurement target, an optical system to transfer light to the measurement target, and a first detector to detect light reflected and diffracted by the measurement target. The first detector measures pattern uniformity based on the intensity of the pupil image of a pupil plane.

  • The apparatus measures pattern uniformity in a measurement target using a light source and a first detector.
  • The measurement target is supported on a stage, and the light from the source is transferred to the target through an optical system.
  • The first detector detects light reflected and diffracted by the target, or diffracted by passing through the target.
  • The first detector specifically detects the pupil image of a pupil plane and measures pattern uniformity based on the intensity of zero-order or 1-order light of the pupil image.

Potential Applications

  • Semiconductor manufacturing: The apparatus can be used to measure the pattern uniformity of masks used in semiconductor manufacturing processes.
  • Optical lithography: The measurement method can be applied to ensure the uniformity of patterns in optical lithography processes.
  • Display manufacturing: The apparatus can be utilized to measure the pattern uniformity of masks used in the production of displays.

Problems Solved

  • Accurate measurement of pattern uniformity: The apparatus provides a method to accurately measure the uniformity of patterns on a measurement target.
  • Quality control in manufacturing: The measurement method can be used to ensure the quality and consistency of masks used in various manufacturing processes.
  • Optimization of manufacturing processes: By measuring pattern uniformity, manufacturers can identify and address any issues or variations in the manufacturing process.

Benefits

  • Improved manufacturing efficiency: The apparatus allows for quick and accurate measurement of pattern uniformity, enabling manufacturers to identify and resolve any issues promptly.
  • Enhanced product quality: By ensuring pattern uniformity, the apparatus helps in producing high-quality products with consistent performance.
  • Cost savings: The measurement method can help prevent defects and errors in manufacturing, reducing the need for rework or scrap.


Original Abstract Submitted

An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1-order light of the pupil image.

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